| PART |
Description |
Maker |
| VSC3040 |
11 Gbps 144 × 144 Asynchronous Crosspoint Switch
11 Gbps 144 】 144 Asynchronous Crosspoint Switch
|
Vitesse Semiconductor Corporation
|
| M57732 57732 |
144-175 MHz, 12.5V, 7W, FM PORTABLE RADIO
144-175MHZ, 12.5V,7W, FM POPHTABLE RADIO
From old datasheet system
144-175MHz 12.5V /7W /FM PORTABLE RADIO
144-175MHz 12.5V,7W,FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
|
| SPS-4310RW-CXX0G |
6.144 Gbps / CWDM / 10 km Digital DiagnosticMulti-Rate CPRI SM SFP
|
Optoway Technology Inc
|
| SPB-4940BRLWG SPB-4940ARLWG SPB-4940RLWG |
6.144 Gbps / 1330 nm TX / 1270 nm RX / 40 km Digital DiagnosticMulti-Rate CPRI SMSFP
|
Optoway Technology Inc
|
| SPB-4820ARLWG SPB-4820RLWG SPB-4820BRLWG |
6.144 Gbps / 1270 nm TX / 1330 nm RX / 20 km Digital DiagnosticMulti-Rate CPRI SMSFP
|
Optoway Technology Inc
|
| SPS-4170ARWG SPS-4170BRWG |
6.144 Gbps / 1310 nm / 70 km Digital Diagnostic Multi-Rate CPRI SMSFP
|
Optoway Technology Inc
|
| HM514260AJ-10 HM514260AJ-8 HM514260ALJ-7 HM514260A |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
262, 144-Word x 16-Bit Dynamic Random Access Memory
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
HITACHI[Hitachi Semiconductor]
ITT, Corp.
|
| 24C256 IS24C256 IS24C256-2G IS24C256-2GI IS24C256- |
262,144-bit 2-WIRE SERIAL CMOS EEPROM
262,144-bit 2-WIRE SERIAL CMOS EEPROM 32K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
DIODE ZENER 6.2V 120MW SSSMINI2
262/144-bit2-WIRESERIALCMOSEEPROM
|
Integrated Silicon Solu...
Integrated Silicon Solution, Inc.
ETC
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| K4D263238G-GC360 K4D263238G-GC33 K4D263238G-GC2A0 |
4M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
4M X 32 DDR DRAM, 0.55 ns, PBGA144 FBGA-144
4M X 32 DDR DRAM, 0.55 ns, PBGA144 LEAD FREE, FBGA-144
|
Sensitron Semiconductor
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| GS4576S18GL-24IT GS4576S18GL-24T GS4576S18L-18T |
DDR DRAM, PBGA144 ROHS COMPLIANT, UBGA-144
DDR DRAM, PBGA144 UBGA-144
|
GSI Technology, Inc.
|
| HM514260LTT-10 HM514260LTT-7 HM514260LTT-8 HM51426 |
100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
|
Hitachi Semiconductor
|
| M67727 67727 |
144-148MHz /12.5V /60W / SSB MOBILE RADIO
144-148MHz,12.5V,60W, SSB MOBILE RADIO
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
